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Published: 2019-07-13Browse Times: Font Size: [ Big Mid Lit ]

Chapter1: The Crystal Structure of Solids I (8 classes)

1. The present and future of semiconductors and related physics

2. Semiconductor materials

3. Space Lattices

3.1 Primitive and Unit Cell

3.2 Basic Crystal Structures

3.3 Crystal Planes and Miller Indices

3.4 Directions in Crystals

4. The Diamond Structure

5. Atomic Bonding

6. Imperfections and Impurities in Solids

6.1 Imperfections in Solids

6.2 Impurities in Solids

7. Growth of Semiconductor Materials

7.1 Growth from a Melt

7.2Epitaxial Growth

 

Chapter2: The Semiconductor in Equilibrium (10 classes)

1. Crystal structure and binding properties

2. Electron states and energy bands

3. Electron motion and effective mass

4. The conductive mechanism of semiconductor fourth of this syndrome.

5. Cyclotron resonance

6. Band of silicon and germanium

7. The band structure of section seventh at the III V compound semiconductor.

8. Section wide bandgap semiconductor material

Key words: crystal structure, energy band, effective mass, Energy band and effective mass

 

Chapter3: Carrier Transport Phenomena (6 classes)

1. Carrier drift motion and mobility

2. Carrier scattering

3. Relationship between mobility and impurity concentration and temperature

4. Relationship between resistivity and impurity concentration and temperature

5. Effect of intense electric field, hot carrier

6. MultiValley scattering, Gunn Effect

Key words: conductivity, drift velocity, mobility, scattering mechanism, mean free time, scattering probability

 

Chapter4: Non-equilibrium Excess Carriers in Semiconductors (8 classes)

1. Injection and recombination of nonequilibrium carriers

2. Nonequilibrium carrier lifetime

3. Quasi Fermi level

4. Complex theory

5. Trap effect

6. Diffusion motion of carriers

7. Carrier drift motion, Einstein relation

8. Continuity equation

Key points: quasi Fermi level, trap effect, injection and recombination, diffusion and drift, Einstein relation, continuity equation

 

Chapter5: PN junction (10 classes)

1. Formation of a PN junction

2. Equilibrium PN junction

3. Non-equilibrium PN junction

4. Electric field and potential distribution in space charge region

5. Current characteristics

6. Breakdown characteristics

7. Capacitance characteristics

8. Switching characteristics

Key words: Depletion, build-in barrier, forward bias, reverse bias, breakdown, barrier capacitance, diffusion capacitance

 

Chapter6: MOSFETs (14 classes)

1. Working principle of MOSFETs

2. Threshold voltage

3. Current characteristics

4. Secondary effects of MOSFETs

5. Breakdown characteristics

6. Capacitance characteristics

7. Small dimension MOSFETs

8. Scaling-down rules

Key words: threshold voltage, linear operation, saturated operation, sub-threshold behavior, secondary effects, MOS capacitor

 

Chapter7: Bipolar Junction Transistors (8 classes)

1. The structure of BJTs

2. Current transport mechanism of transistors

3. Current characteristics

4. Reverse characteristics

5. Frequency response characteristics

6. Switching characteristics

7. Modeling of BJTs

8. Modern BJTs

Key words: emitter, base, collector, current gain, forward active region, cutoff region, cutoff frequency

Jianshuang Liu

May 20, 2018

 




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